​Photovoltaic Mercury Cadmium Telluride Detectors​


Photovoltaic Mercury Cadmium Telluride Short Form Catalog in PDF Format


J19TE Series Photovoltaic MCT Detectors

J19TE series detectors are high-quality HgCdTe photodiodes for use in the 500nm to 5.0um range. The equivalent circuit is a photon-generated current source Iph with parallel capacitance CD, Shunt resistance RD, and series resistance RS.

Temperature Effects: Cooling an HgCdTe photodiode reduces noise and improves det​ectivity. Cooling also increases shunt resistance RD HgCdTe photodiodes also improve their response at longer wavelengths with a reduction in temperature.

Figure 19 Figure 20
Figure 19 Figure 20​​


Figure 21 Figure 22
Figure 21 Figure 22


Table 1.  2.8µm Cutoff Room Temperature and Thermoelectrically Cooled PV MCT, One through Four Stages (TE1-4)
Detector Model Number Detector Part Number Active Size Diameter

(mm)
Operating Temp.

(°C)
50% Cutoff Wavelength Typ
(µm)
Peak Wavelength Typ
(µm)
Peak Responsivity
(A/W)   
Min 
Shunt Impedance (Ohm)

Min         Typ   

Dark Current
@ -0.1V
(A)
Typ       Min

Peak D* (Jones)
 @ 1KHz

Min          Typ
J19:2.8-18C-R250U 440045 0.25 22 2.8 2.6 1.3 7.5E+03 1.5E+04 2.0E-06 2.0E-05 2.0E+10 2.8E+10
J19:2.8-18C-R01M 440044 1.00 22 2.8 2.6 1.3 7.5E+02 1.5E+03 2.0E-05 2.0E-04 2.5E+10 3.5E+10
J19TE1:2.8-66C-R250U 440048 0.25 -20 2.8 2.6 1.3 1.0E+05 2.0E+05 1.0E-07 1.0E-06 7.7E+10 1.1E+11
J19TE1:2.8-66C-R01M 440047 1.00 -20 2.8 2.6 1.3 1.0E+04 2.0E+04 1.0E-06 1.0E-05 9.7E+10 1.4E+11
J19TE2:2.8-66C-R250U 440049 0.25 -40 2.8 2.6 1.3 7.5E+05 1.5E+06 2.0E-08 2.0E-07 2.1E+11 2.9E+11
J19TE2:2.8-66C-R01M 440041 1.00 -40 2.8 2.6 1.3 7.5E+04 1.5E+05 2.0E-07 2.0E-06 2.7E+11 3.7E+11
J19TE3:2.8-66C-R250U 440050 0.25 -65 2.8 2.6 1.3 4.0E+06 8.0E+06 5.0E-09 5.0E-08 4.7E+11 5.9E+11
J19TE3:2.8-66C-R01M 440042 1.00 -65 2.8 2.6 1.3 4.0E+05 8.0E+05 5.0E-08 5.0E-07 5.9E+11 7.4E+11
J19TE4:2.8-3CN-R250U 440051 0.25 -85 2.8 2.6 1.3 1.6E+07 3.2E+07 3.0E-09 3.0E-08 7.2E+11 8.0E+11
J19TE4:2.8-3CN-R01M 440043 1.00 -85 2.8 2.6 1.3 1.6E+06 3.2E+06 3.0E-08 3.0E-07 9.1E+11 1.0E+12
J19TE4:2.8-3VN-R250U TBA 0.25 -90 2.8 2.6 1.3 3.2E+07 6.4E+07 2.0E-09 2.0E-08 8.1E+11 8.6E+11
J19TE4:2.8-3VN-R01M TBA 1.00 -90 2.8 2.6 1.3 3.2E+06 6.4E+06 2.0E-08 2.0E-07 1.0E+12 1.1E+12
Table 2.  5.0µm Cutoff Thermoelectrically Cooled PV MCT, One through Four Stages (TE1-4)
Detector Model Number Detector Part Number Active Size Diameter

(mm)
Operating Temp.

(°C)
50% Cutoff Wavelength
Typ.
(µm)
Peak Wavelength
Typ.
(µm)
Peak Responsivity
(A/W)
Min 
Shunt Impedance
(Ohm)

Min         Typ    
Dark Current
(A)

Typ        Max
Peak D* (Jones)
 @ 10KHz

Min          Typ
J19TE1:5-66C-R250U 440052 0.25 -20 5.0 4.5 1.5 2.0E+02 4.0E+02 5.0E-05 2.0E-04 4.0E+09 5.6E+09
J19TE1:5-66C-R01M 440038 1.00 -20 5.0 4.5 1.0 2.0E+01 4.0E+01 5.0E-04 2.0E-03 3.4E+09 4.7E+09
J19TE2:5-66C-R250U 440016 0.25 -40 5.0 4.5 1.7 5.0E+02 1.0E+03 2.0E-05 8.0E-05 7.4E+09 1.1E+10
J19TE2:5-66C-R01M 440017 1.00 -40 5.0 4.5 1.3 5.0E+01 1.0E+02 2.0E-04 8.0E-04 7.2E+09 1.0E+10
J19TE3:5-66C-R250U 440008 0.25 -65 5.0 4.5 1.9 1.6E+03 3.2E+03 6.0E-06 2.4E-05 1.6E+10 2.2E+10
J19TE3:5-66C-R01M 440010 1.00 -65 5.0 4.5 1.6 1.6E+02 3.2E+02 6.0E-05 2.4E-04 1.7E+10 2.4E+10
J19TE4:5-3CN-R250U 440022 0.25 -80 5.0 4.5 2.1 3.6E+03 7.2E+03 3.0E-06 1.2E-05 2.7E+10 3.8E+10
J19TE4:5-3CN-R01M 440023 1.00 -80 5.0 4.5 2.0 3.6E+02 7.2E+02 3.0E-05 1.2E-04 3.3E+10 4.6E+10
J19TE4:5-3VN-R250U 440053 0.25 -90 5.0 4.5 2.2 6.0E+03 1.2E+04 2.0E-06 8.0E-06 3.8E+10 5.4E+10
J19TE4:5-3VN-R01M 440037 1.00 -90 5.0 4.5 2.2 6.0E+02 1.2E+03 2.0E-05 8.0E-05 4.8E+10 6.8E+10
Table 3.  5.5µm Cutoff Thermoelectrically Cooled PV MCT, One through Four Stages (TE1-4)
Detector Model Number Detector Part Number Active Size Diameter

(mm)
Operating Temp.

(°C)
50% Cutoff Wavelength
Typ.
(µm)
Peak Wavelength
Typ.
(µm)
Peak Responsivity
(A/W)
Min 
Shunt Impedance
(Ohm)

Min         Typ  
Dark Current
(A)

Typ        Max
Peak D* (Jones)
 @ 10KHz

Min          Typ
J19TE1:5.5-66C-R250U 440054 0.25 -20 5.5 5.0 1.7 1.0E+02 2.0E+02 1.0E-04 4.0E-04 3.2E+09 4.5E+09
J19TE1:5.5-66C-R01M 440055 1.00 -20 5.5 5.0 1.2 1.0E+01 2.0E+01 1.0E-03 4.0E-03 2.8E+09 4.0E+09
J19TE2:5.5-66C-R250U 440018 0.25 -40 5.5 5.0 1.9 2.5E+02 5.0E+02 4.0E-05 1.6E-04 5.9E+09 8.3E+09
J19TE2:5.5-66C-R01M 440019 1.00 -40 5.5 5.0 1.5 2.5E+01 5.0E+01 4.0E-04 1.6E-03 5.9E+09 8.3E+09
J19TE3:5.5-66C-R250U 440020 0.25 -65 5.5 5.0 2.1 8.0E+02 1.6E+03 1.2E-05 4.8E-05 1.2E+10 1.7E+10
J19TE3:5.5-66C-R01M 440021 1.00 -65 5.5 5.0 1.8 8.0E+01 1.6E+02 1.2E-04 4.8E-04 1.3E+10 1.9E+10
J19TE4:5.5-3CN-R250U 440024 0.25 -80 5.5 5.0 2.3 1.8E+03 3.6E+03 6.0E-06 2.4E-05 2.1E+10 3.0E+10
J19TE4:5.5-3CN-R01M 440025 1.00 -80 5.5 5.0 2.2 1.8E+02 3.6E+02 6.0E-05 2.4E-04 2.5E+10 3.6E+10
J19TE4:5.5-3VN-R250U 440056 0.25 -90 5.5 5.0 2.4 3.0E+03 6.0E+03 4.0E-06 1.6E-05 2.9E+10 4.2E+10
J19TE4:5.5-3VN-R01M 440039 1.00 -90 5.5 5.0 2.4 3.0E+02 6.0E+02 4.0E-05 1.6E-04 3.7E+10 5.3E+10​


Thermoelectric Cooler Operation: Figures 23, 24 and 25 show typical power requirements for the TE2, TE3, and TE4 coolers. The built in thermistor can be used to monitor or control the temperature. Figure 21 shows typical thermistor resistance vs. temperature values. Sensitivity, cutoff wavelength and response uniformity are all functions of temperature. Detector temperature should be optimized for a particular application.

Figure 23 Figure 24
Figure 23 Figure 24​​
Figure 25  


Figure 25


Operating Circuit: The recommended operating circuit for most applications is an operational amplifier in a negative-feedback transimpedance configuration (Figure 22) with 0.1V reverse bias put across the detector. This reverse bias will increase the effective shunt impedance of the detector and will nullify the responsivity effect described in the J12 series operation notes.

Advantages of Photovoltaic HgCdTe: Unlike the photoconductors commonly used in the 500nm to 5.0um region, HgCdTe photodiodes operate in the photovoltaic mode and do not require a bias current for operation. This makes J19TE detectors the better choice for DC and low-frequency applications, as it does not exhibit the low frequency or "1/F" noise characteristic of the PbS, PbSe and HgCdTe photoconductors. J19TE detectors also offer superior pulse response for applications in monitoring and detecting high-speed pulsed lasers.